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부품번호 | HAF2017S 기능 |
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기능 | Silicon N-Channel Power MOS FET | ||
제조업체 | Renesas | ||
로고 | |||
HAF2017(L), HAF2017(S)
Silicon N Channel Power MOS FET
Power Switching
REJ03G0234-0200Z
(Previous ADE-208-1637 (Z))
Rev.2.00
Apr.13.2004
Descriptions
This FET has the over temperature shutdown capability sensing the junction temperature. This FET has the built-in
over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
• Logic level operation (4 to 6 V Gate drive)
• High endurance capability against to the short circuit
• Built-in the over temperature shutdown circuit
• Latch type shutdown operation (Need 0 voltage recovery)
Outline
D
G Gate Resistor
Tempe-
rature
Sensing
Circuit
Latch
Circuit
Gate
Shut-
down
Circuit
S
LDPAK(L)
4
LDPAK(S)-1
4
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
Rev.2.00, Apr.13.2004, page 1 of 8
HAF2017(L), HAF2017(S)
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
50
10 V 8 V
Pulse Test
40
6V
30 5 V
4V
20
VGS = 3.5 V
10
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain Source Saturation Voltage vs.
Gate to Source Voltage
1.0
Pulse Test
0.8
0.6 ID = 20 A
0.4
10 A
0.2 5 A
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Rev.2.00, Apr.13.2004, page 4 of 8
Maximum Safe Operation Area
500
Thermal shut down
200 operation area
100
50
20
10
5 Operation
2
in this area
is limited RDS(on)
1
100 µs
1 ms
PW
(TcD=C2O5p°C=e)r1a0tiomns
0.5 Ta = 25°C
0.3 0.5 1 2
5 10 20 50 100
Drain to Source voltage VDS (V)
Typical Transfer Characteristics
50
VDS = 10 V
Pulse Test
40
30 Tc = -25°C
25°C
20 75°C
10
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source State Resistance
vs. Drain Current
1000
300
100
VGS = 4.5 V
30
VGS = 10 V
10
3
Pulse Test
1
0.1 0.3 1 3 10 30 100
Drain Current ID (A)
4페이지 HAF2017(L), HAF2017(S)
Package Dimensions
10.2 ± 0.3
2.54 ± 0.5
1.3 ± 0.2
1.37 ± 0.2
0.86
+
–
0.2
0.1
0.76 ± 0.1
2.54 ± 0.5
4.44 ± 0.2
1.3 ± 0.15
As of January, 2003
Unit: mm
2.49 ± 0.2
0.4 ± 0.1
Package Code
JEDEC
JEITA
Mass (reference value)
LDPAK (L)
—
—
1.40 g
As of January, 2003
Unit: mm
10.2 ± 0.3
4.44 ± 0.2
1.3 ± 0.15
1.3 ± 0.2
2.54 ± 0.5
1.37 ± 0.2
0.86
+
–
0.2
0.1
2.54 ± 0.5
2.49 ± 0.2
0.1
+
–
0.2
0.1
0.4 ± 0.1
7.8
6.6
2.2
Package Code
JEDEC
JEITA
Mass (reference value)
LDPAK (S)-(1)
—
—
1.30 g
Rev.2.00, Apr.13.2004, page 7 of 8
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ HAF2017S.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
HAF2017 | Silicon N-Channel Power MOS FET | Renesas |
HAF2017L | Silicon N-Channel Power MOS FET | Renesas |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |