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BD9211F PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BD9211F
기능 LED Driver control IC
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BD9211F 데이터시트, 핀배열, 회로
STRUCTURE
Silicon Monolithic Integrated Circuit
NAME OF PRODUCT LED Driver control IC
TYPE BD9211F
FEATURE
Using 20V high-voltage-withstand process
1Channel Push-Pull control
Current and voltage feedback is controlled
by drive frequency modulation
Built-in soft start circuit
Built-in timer latch circuit
Built-in shut down protection
Built-in UVLO detection circuit
Output Over Voltage Protection
Built-in error signal output function
Switching to current consumption save mode through STB pin
Possible to control the burst by external PWM
1/4
Absolute Maximum Ratings (Ta=25)
Item
Symbol
Rated voltage
Unit
Power supply voltage
VCC
20
V
Driver Output
Operating temperature
Storage temperature range
Maximum Junction Temperature
N1,N2
Topr
Tstg
Tjmax
20
-40+85
-55+150
+150
V
Power Dissipation
Pd
687*
mW
* It reduces gradually by 5.5 mW/if above Ta= 25(when mounting the board of 70.0mm×70.0mm×1.6mm)
Recommended Operation Ranges
Item
Power Supply
PWMIN input frequency range
Output frequency
Symbol
VCC
F_PWMIN
FOUT
Range
8.018.0
60500
25200
Unit
V
Hz
kHz
REV. A




BD9211F pdf, 반도체, 판매, 대치품
4/4
NOTE FOR USE
. When designing the external circuit, including adequate margins for variation between external devices and IC. Use adequate margins
for steady state and transient characteristics.
. The circuit functionality is guaranteed within of ambient temperature operation range as long as it is within recommended operating
range. The standard electrical characteristic values cannot be guaranteed at other voltages in the operating ranges, however the
variation will be small.
. Mounting failures, such as misdirection or miscounts, may harm the device.
. A strong electromagnetic field may cause the IC to malfunction.
. The GND pin should be the location within ±0.3V compared with the PGND pin.
. If the voltage between VCC and I/O pins or GND and I/O pins is in opposite from the normal potential difference, unusual current flow
into pins may occur which can destroy the IC. To avoid such occurrence it is recommended to place protection diodes for prevention
against backward current flow.
. BD9211F incorporate a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit (TSD circuit) is designed only to
shut the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee its operation of the thermal
shutdown circuit is assumed.
. Absolute maximum ratings are those values that, if exceeded, may cause the life of a device to become significantly shortened.
Moreover, the exact failure mode caused by short or open is not defined. Physical countermeasures, such as a fuse, need to be
considered when using a device beyond its maximum ratings.
. About the external FET, the parasitic Capacitor may cause the gate voltage to change, when the drain voltage is switching. Make sure
to leave adequate margin for this IC variation.
10. By STB voltage, BD9211F are changed to 2 states. Therefore, do not input STB pin voltage between one state and the other state
(0.82.0V).
11. The pin connected a connector need to connect to the resistor for electrical surge destruction.
12.This IC is a monolithic IC which (as shown is Fig.4)has P+ substrate and between the various pins. A P-N junction is formed from
this P layer of each pin. For example, the relation between each potential is as follows,
(When GND > PinB and GND > PinA, the P-N junction operates as a parasitic diode.)
(When PinB > GND > PinA, the P-N junction operates as a parasitic transistor.)
Parasitic diodes can occur inevitably in the structure of the IC. The operation of parasitic diodes can result in mutual interference
among circuits as well as operation faults and physical damage. Accordingly you must not use methods by which parasitic diodes
operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin
(PinA)
Resistance
(PinB)
Transistor (NPN)
P substrate
GND
Parasitic diode
P PP
NN
P substrate
GND
Parasitic diode
GND
(PinB)
(PinA)
Parasitic
GND
BC
Parasitic diode
GND
Other adjacent components
Fig.4. Simplified structure of a Bipolar IC
REV. A

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전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

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링크공유

링크 :

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