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D882 데이터시트 PDF




WILLAS에서 제조한 전자 부품 D882은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 D882 기능
기능 Plastic-Encapsulate Transistors
제조업체 WILLAS
로고 WILLAS 로고


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D882 데이터시트, 핀배열, 회로
WILLAS
SO1.0TA-S8U9RFPAlCaEsMtOicUN-ET SnCcHaOpTTsKuY BlaAtReRIETRrRaEnCsTIiFsIEtRoSr-s20V- 200V
SOD-123+ PACKAGE
FM120-M+
D882 THRU
FM1200-M
Pb Free Produc
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
TRANSISTOoRpti(mNizPeNb)oard space.
Low power loss, high efficiency.
FEATURESHigh current capability, low forward voltage drop.
Power diHsisgihpsautirogne capability.
Guardring for overvoltage protection.
Pb-Free pacUkltaragheigihs-sapveeadilsawbitlcehing.
RoHS produScilticfoonr eppaitcakxinalgplcaondarechsiupf,fmixetaGl silicon junction.
Halogen freeLMeIpaLrd-oS-fdTreDue-c1pt9af5ort0sr0mp/2ae2ec8tkeinngvircoonmdeenstaulfsfitxandHards of
RoHS product for packing code suffix "G"
Package outline
SOD-123H
SOT-89
0.146(3.7)
0.130(3.3)
1. BASE
2. COLLECTOR
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Halogen free product for packing code suffix "H"
Mechanical data
MAXIMUMEpRoxAyT: IUNLG94S-V(0Traa=te2d5flamuenrleetasrsdaonttherwise noted)
Case : Molded plastic, SOD-123H
Symbol Terminals :PlPaaterdamteermteirnals, solderable pVearluMeIL-STDU-7n5it0,
3. EMITTER
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
VCBO
VCEO
VEBO
IC
Collector-MBeatsheodV2o0lta2g6e
PoClaorllietyct:oInr-dEicmaittetedr bVyocltaatgheode band
Mounting Position : Any
Emitter-Base Voltage
Weight : Approximated 0.011 gram
Collector Current -Continuous
40
30
6
3
V
V
V
A
Dimensions in inches and (millimeters)
PC ColleMctAorXPIMowUeMr DRisAsTipIaNtiGonS AND EL0E.C5 TRICALWCHARACTERISTICS
TJ Ratings at 2J5unctaiomnbTieenmt tpeemrpaeturareture unless otherwis1e5s0pecified.
Single phase half wave, 60Hz, resistive of inductive load.
 TstgFor capacitSivteorloaagde, dTeermatpeecruartruernet by 20%
-55~150
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
12 13
14 15
ELEMCaTximRuImCAReLcuCrreHntAPReaAk CReTveErsReIVSoTltaIgCeS(Ta=
Maximum RMS Voltage
25VVRRuMRnMS less21o04therw32i01se
spe4208cified53) 05
16
60
42
18 10
115 120
80 100 150 200
56 70
105 140
MaximumPDaCraBmlocektinegr Voltage
SymboVlDC
Maximum Average Forward Rectified Current
C ollector-base breakdown voltage
IO
V(BR)CB  O
ColPleeacktoFor-rweamrditStuerrgebCreurarekndt o8.w3 mnsvsoinlgtaleghealf sine-wVav(eBR)CEIFOSM
superimposed on rated load (JEDEC method)
EmTitytpeicr-abl TahseermbarleRaeksdisotawncne v(Nooltteag2)e
V(BR)ERBOΘJA
ColTleypcitcoalrJcuunctt-ionffCcauprarceitanntce (Note 1)
ICBO CJ
ColOlepcetraotrincguTte-mopffercauturrreeRnatnge
Storage Temperature Range
E mitter cut-off current
ICEO TJ
TSTG
IEBO
T2e0st con3d0itions 40
IC = 100μA, IE=0
IC = 10mA, IB=0
IE= 100μA, IC  =0
VCB= 40V, IE =0
VCE= 30V-5,5IBto=0+125
VEB= 6V, IC=0
5M0 in
40
30
6
60 Typ
1.0
 
30
80
Max100
Unit150
V
V
40
120
 
- 65 to +175
 V
  1 µA
-5150to +150 µA
1 µA
200
 
CHARACTERISTICS
hFES(1Y) MBOL FVMC1E2=0-2MVH, FICM=1310-AMH FM140-MH FM15600-MH FM160-MH FM180-MH4F0M01100-MH FM1150-MH FM1200-MH
DCMcauxrimreunmtFgoarwinard Voltage at 1.0A DC
hFE(2)VF
Maximum Average Reverse Current at @T
ColRleactetdoDr-CemBloitctkeinrgsVaotlutargaetion voltage@T
AA==12255℃℃VCE(sat)IR
VCE=2V, IC= 1000m.50A
IC= 2A, IB= 0.2 A
320.70
0.5
10
0.85
0.5
0.9
V
0.92
 
B ase-emitter saturation voltage
NOTES:
VBE(sat)
IC= 2A, IB= 0.2 A
1.5 V
Tra1n- sMietaiosunrefdreatq1uMeHnZcyand applied reverse voltage of 4.0 VfDT C.
2- Thermal Resistance From Junction to Ambient
 
VCE= 5V , Ic=0.1A
f =10MHz
50
MHz
 
CLASSIFICATION OF hFE(1)
Rank
R
20R1a2n-0g6e
60-120
O
100-200
Y
160-320
GR
WILLAS20E0L-4E0C0TRONIC COR
2012-0
WILLAS ELECTRONIC CORP.





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