Datasheet.kr   

CPV362MF 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 CPV362MF은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 CPV362MF 자료 제공

부품번호 CPV362MF 기능
기능 IGBT SIP MODULE Fast IGBT
제조업체 International Rectifier
로고 International Rectifier 로고


CPV362MF 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 8 페이지수

미리보기를 사용할 수 없습니다

CPV362MF 데이터시트, 핀배열, 회로
Previous Datasheet
Index
Next Data Sheet
PD - 5.026
IGBT SIP MODULE
Features
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency (1 to 10kHz)
See Fig. 1 for Current vs. Frequency curve
CPV362MF
Fast IGBT
1
3 Q1
Q2
6
D1
9 Q3
4
D2 Q4
12
D3
15 Q5
10
D4 Q6
18
D5
16
D6
Product Summary
7 13
Output Current in a Typical 5.0 kHz Motor Drive
4.6 ARMS per phase (1.4 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 80% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
19
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 min.
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
8.8
4.8
26
26
3.4
26
±20
2500
23
9.1
-40 to +150
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55-0.8 N•m)
Units
V
A
V
VRMS
W
°C
Thermal Resistance
RθJC (IGBT)
RθJC (DIODE)
RθCS (MODULE)
Wt
Parameter
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
Weight of module
Typ.
0.1
20 (0.7)
Max.
5.5
9.0
Units
°C/W
g (oz)
C-141
Revision 1
To Order




CPV362MF pdf, 반도체, 판매, 대치품
Previous Datasheet
Index
Next Data Sheet
CPV362MF
16
VGE = 15V
12
8
4
0
25 50 75 100 125 150
TC , C ase Tem perature (°C)
Fig. 4 - Maximum Collector Current vs.
Case Temperature
4.0
VGE = 15V
80µs PULSE WIDTH
3.5
IC = 18A
3.0
2.5 IC = 9.0A
2.0
IC = 4.5A
1.5
1.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TC , C ase Tem perature (°C)
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
10
D = 0 .50
1 0 .20
0 .10
0 .05
0 .0 2
0 .0 1
0.1
S IN G LE PU LSE
(T H ER M A L R ES PO N S E)
0.01
0.000 01
0.0001
PD M
N otes:
1. Duty factor D = t1 / t 2
t1
t2
2. Peak TJ = PD M x Z thJC + T C
0.001
0.01
0.1
1
t1 , Rectangular P ulse Duration (sec)
10
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
C-144
To Order

4페이지










CPV362MF 전자부품, 판매, 대치품
Previous Datasheet
Index
Next Data Sheet
100
VR = 200V
TJ = 125°C
TJ = 25°C
80
60
40
IF = 4.0A
20
IF = 16A
IF = 8.0A
CPV362MF
100
VR = 200V
TJ = 125°C
TJ = 25°C
10
IF = 8.0A
IF = 16A
IF = 4.0A
0
100 1000
dif /dt - (A/µs)
Fig. 14 - Typical Reverse Recovery vs. dfi/dt
1
100 1000
di f /dt - (A/µs)
Fig. 15 - Typical Recovery Current vs. dfi/dt
500
VR = 200V
TJ = 125°C
TJ = 25°C
400
10000
VR = 200V
TJ = 125°C
TJ = 25°C
300
IF = 16A
200
IF = 8.0A
100
IF = 4.0A
0
100 1000
dif /dt - (A/µs)
Fig. 16 - Typical Stored Charge vs. dfi/dt
1000
IF = 4.0A
IF = 8.0A
IF = 16A
100
100
di f /dt - (A/µs)
1000
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
C-147
To Order

7페이지


구       성 총 8 페이지수
다운로드[ CPV362MF.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
CPV362M4F

IGBT SIP MODULE

International Rectifier
International Rectifier
CPV362M4FPbF

IGBT SIP Module

Vishay
Vishay

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵