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부품번호 | MMBT3906W 기능 |
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기능 | General Purpose Transistor | ||
제조업체 | SeCoS | ||
로고 | |||
전체 5 페이지수
Elektronische Bauelemente
MMBT3906W
PNP Silicon
General Purpose Transistor
FEATURES
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
· Epitaxial Planar Die Construction
· Complementary NPN Type Available
(MMBT3904W)
· Ideal for Medium Power Amplification and
Switching
"Lead free is available"
A
L
COLLECTOR
3
3
Top View
BS
1
BASE
2
EMITTER
1
2
SC-70
SOT-323
V
D
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT3906W = 2A, K5N
Symbol
VCEO
VCBO
VEBO
IC
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
G
C
H
K
Value
–40
–40
–5.0
–200
Unit
Vdc
Vdc
Vdc
mAdc
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
SOT-323(SC-70)
Dim Min Max
A 1.800 2.200
B 1.150 1.350
C 0.800 1.000
D 0.300 0.400
G 1.200 1.400
H 0.000 0.100
J 0.100 0.250
K 0.350 0.500
L 0.590 0.720
S 2.000 2.400
J V 0.280 0.420
All Dimension in mm
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = –1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
Base Cutoff Current
(VCE = –30 Vdc, VEB = –3.0 Vdc)
Collector Cutoff Current
(VCE = –30 Vdc, VEB = –3.0 Vdc)
1. FR– 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
V(BR)CEO
Vdc
–40 —
V(BR)CBO
Vdc
–40 —
V(BR)EBO
Vdc
–5.0 —
IBL nAdc
— –50
ICEX
nAdc
— –50
REM : Thermal Clad is a trademark of the Bergquist Company.
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
Any changing of specification will not be informed individual
Page 1 of 5
Elektronische Bauelemente
MMBT3906W
PNP Silicon
General Purpose Transistor
TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = – 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
5.0
WSOURCE RESISTANCE = 200
IC = 1.0 mA
4.0
WSOURCE RESISTANCE = 200
IC = 0.5 mA
3.0 SOURCE RESISTANCE = 2.0 k
IC = 50 mA
2.0
m1.0 SOURCE RESISTANCE = 2.0 k
IC = 100 A
0
0.1 0.2 0.4
1.0 2.0 4.0 10 20 40
f, Frequency (kHz)
Figure 7.
100
12
f = 1.0 kHz
10
8
IC = 1.0 mA
IC = 0.5 mA
6
4 IC = 50 mA
m2 IC = 100 A
0
0.1 0.2
0.4 1.0 2.0 4.0 10 20
Rg, Source Resistance (k OHMS)
Figure 8.
40
100
h PARAMETERS
(VCE = – 10 Vdc, f = 1.0 kHz, TA = 25°C)
300
200
100
70
50
30
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, Collector Current (mA)
Figure 9. Current Gain
5.0 7.0 10
100
70
50
30
20
10
7
5
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, Collector Current (mA)
5.0 7.0 10
Figure 10. Output Admittance
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0
I C, Collector Current (mA)
Figure 11. Input Impedance
5.0 7.0 10
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, Collector Current (mA)
5.0 7.0 10
Figure 12. Voltage Feedback Ratio
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
Any changing of specification will not be informed individual
Page 4 of 5
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