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PDF CPV363MF Data sheet ( Hoja de datos )
| Número de pieza | CPV363MF | |
| Descripción | IGBT SIP MODULE Fast IGBT | |
| Fabricantes | International Rectifier | |
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PD - 5.023B
IGBT SIP MODULE
Features
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
CPV363MF
Fast IGBT
1
Q1
3
6 Q2
D1
Q3
9
4
D2
12 Q4
D3
Q5
15
10
D4
18 Q6
D5
16
D6
Product Summary
7 13
Output Current in a Typical 5.0 kHz Motor Drive
7.65 ARMS per phase (2.4 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 80% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 min.
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
16
8.7
50
50
6.1
50
±20
2500
36
14
-40 to +150
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55-0.8 N•m)
19
IMS-2
Units
V
A
V
VRMS
W
°C
Thermal Resistance
RθJC (IGBT)
RθJC (DIODE)
RθCS (MODULE)
Wt
Parameter
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
Weight of module
C-149
Typ.
—
—
0.1
20 (0.7)
Max.
3.5
5.5
—
—
Units
°C/W
g (oz)
Revision 1
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CPV363MF
1400
V GE = 0V,
f = 1MHz
Cies = Cge + C gc , Cce SHORTED
1200 Cres = C gc
Coes = Cce + C gc
1000
Cies
800
Coes
600
400
Cres
200
0
1 10 100
V C E , C ollector-to-E m itter V oltage (V )
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
2.7
VC C = 480V
VG E = 15V
TC = 25°C
2.6 IC = 17A
2.5
2.4
2.3
2.2
0
10 20 30 40 50 60
R G , G ate Resistance (Ω)
W
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
20
VCE = 400V
IC = 17A
16
12
8
4
0
0 5 10 15 20 25
Q g , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
30
10
I C = 34A
I C = 17A
I C = 8.5A
RG = 23 Ω
V GE = 1 5V
1 V CC = 48 0V
-60 -40 -20 0 20 40 60 8 0 1 00 120 140 160
TC, C a se T e m p e ra tu re (°C )
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-153
To Order
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet CPV363MF.PDF ] | |
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