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CPV363MM 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 CPV363MM은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 CPV363MM 기능
기능 IGBT SIP MODULE Short Circuit Rated Fast IGBT
제조업체 International Rectifier
로고 International Rectifier 로고


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CPV363MM 데이터시트, 핀배열, 회로
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CPV363MM
IGBT SIP MODULE
Short Circuit Rated Fast IGBT
Features
• Short Circuit Rated - 10µs @ 125°C, V GE = 15V
Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
1
3 Q1
6 Q2
D1
9 Q3
4
D2
12
Q4
D3
15 Q5
10
D4
18
Q6
D5
16
D6
Product Summary
Output Current in a Typical 5.0 kHz Motor Drive
7 13
7.65 ARMS per phase (2.4 kW total) with T C = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 80% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of IMS
(Insulated Metal Substrate) Power Modules. These modules are more efficient
than comparable bipolar transistor modules, while at the same time having the
simpler gate-drive requirements of the familiar power MOSFET. This superior
technology has now been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance. This package is highly
suited to power applications and where space is at a premium.
19
These new short circuit rated devices are especially suited for motor control and
other totem-pole applications requiring short circuit withstand capability.
Absolute Maximum Ratings
IMS-2
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 min.
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
13
7.0
26
26
6.1
26
10
± 20
2500
36
14
-40 to +150
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55 - 0.8 N•m)
Units
V
A
µs
V
VRMS
W
°C
Thermal Resistance
RθJC (IGBT)
RθJC (DIODE)
RθCS (MODULE)
Wt
Parameter
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
Weight of module
Typ.
0.1
20 (0.7)
Max.
3.5
5.5
Units
°C/W
g (oz)
C-417
Revision 2
To Order




CPV363MM pdf, 반도체, 판매, 대치품
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Index
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CPV363MM
15
VGE = 15V
12
9
6
3
0A
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig. 4 - Maximum Collector Current vs.
Case Temperature
3.0
VGE = 15V
80µs PULSE WIDTH
2.6
2.2
I C = 14A
1.8 IC = 7.0A
1.4 IC = 3.5A
1.0 A
-60 -40 -20 0 20 40 60 80 100 120 140 160
TC, Case Temperature (°C)
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
10
D = 0 .5 0
1
0.2 0
0.1 0
0 .05
0.0 2
0.1 0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
0.0001
PD M
N otes:
1. Duty factor D = t1 / t 2
t1
t2
2. Peak TJ = PD M x Z thJC + T C
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
10
C-420
To Order

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CPV363MM 전자부품, 판매, 대치품
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160
VR = 200V
TJ = 125°C
TJ = 25°C
120
IF = 24A
IF = 12A
80
IF = 6.0A
40
CPV363MM
100
VR = 200V
TJ = 125°C
TJ = 25°C
IF = 24A
10 I F = 12A
IF = 6.0A
0
100 dif /dt - (A/µs) 1000
Fig. 14 - Typical Reverse Recovery vs. dif/dt
600
VR = 200V
TJ = 125°C
TJ = 25°C
1
100 1000
di f /dt - (A/µs)
Fig. 15 - Typical Recovery Current vs. dif/dt
10000
VR = 200V
TJ = 125°C
TJ = 25°C
400
IF = 24A
200 IF = 12A
IF = 6.0A
1000
100
IF = 6.0A
IF = 24A
IF = 12A
0
100 1000
dif /dt - (A/µs)
Fig. 16 - Typical Stored Charge vs. dif/dt
C-423
10
100
di f /dt - (A/µs)
1000
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
To Order

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