CPV363MU Datasheet PDF - International Rectifier
| Part Number | CPV363MU | |
| Description | IGBT SIP MODULE Ultra-Fast IGBT | |
| Manufacturers | International Rectifier | |
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PD - 5.024A
CPV363MU
IGBT SIP MODULE
Ultra-Fast IGBT
Features
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
1
3 Q1
Q2
6
D1
9 Q3
4
D2 Q4
12
D3
15 Q5
10
D4 Q6
18
D5
16
D6
Product Summary
7 13
Output Current in a Typical 20 kHz Motor Drive
5.4 ARMS per phase (1.7 kW total) with T C = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 80% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 min.
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
13
6.8
40
40
6.1
40
±20
2500
36
14
-40 to +150
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55-0.8 N•m)
19
IMS-2
Units
V
A
V
VRMS
W
°C
Thermal Resistance
RθJC (IGBT)
RθJC (DIODE)
RθCS (MODULE)
Wt
Parameter
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink,flat,greased surface
Weight of module
Typ.
—
—
0.1
20 (0.7)
Max.
3.5
5.5
—
—
Units
°C/W
g (oz)
C-749
Revision 1
To Order
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CPV363MU
1400
V GE = 0V,
f = 1MHz
Cies = Cge + C gc , Cce SHORTED
1200 Cres = C gc
Coes = Cce + C gc
1000 Cies
800
Coes
600
400
Cres
200
0
1 10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
VCE = 400V
IC = 12A
16
12
8
4
0
0 5 10 15 20 25
Q g , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
30
0.66
VCC = 480V
VG E = 15V
0.64 TC = 25°C
IC = 12A
0.62
0.60
0.58
0.56
0.54
0
10 20 30 40 50
R G , Gate Resistance (Ω )
60
W
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
10
RG = 23 Ω
V GE = 15 V
V CC = 4 80 V
1
IC = 24A
I C = 12A
I C = 6.0A
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TC, C ase Tem perature (°C )
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-753
To Order
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| Information | Total 8 Pages | |
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