PDF CPV364M4U Data sheet ( Hoja de datos )

Número de pieza	CPV364M4U
Descripción	IGBT SIP MODULE
Fabricantes	International Rectifier
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No Preview Available ! PD- 5041 PRELIMINARY CPV364M4U IGBT SIP MODULE UltraFast IGBT Features • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve 3 Q1 6 Q2 1 D1 9 Q3 4 D2 12 Q4 D3 15 Q5 10 D4 18 Q6 D5 16 D6 Product Summary Output Current in a Typical 20 kHz Motor Drive 7 13 12 ARMS per phase (3.5 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 115% (See Figure 1) 19 Description The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. IMS-2 Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE VISOL PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current, each IGBT Continuous Collector Current, each IGBT Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Isolation Voltage, any terminal to case, 1 minute Maximum Power Dissipation, each IGBT Maximum Power Dissipation, each IGBT Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 600 20 10 60 60 9.3 60 ±20 2500 63 25 -40 to +150 300 (0.063 in. (1.6mm) from case) 5-7 lbf•in (0.55-0.8 N•m) Units V A V VRMS W °C Thermal Resistance RθJC (IGBT) RθJC (DIODE) RθCS (MODULE) Wt Parameter Junction-to-Case, each IGBT, one IGBT in conduction Junction-to-Case, each diode, one diode in conduction Case-to-Sink, flat, greased surface Weight of module Typ. ––– ––– 0.10 20 (0.7) Max. 2.0 3.0 ––– ––– Units °C/W g (oz) 1/21/97 1 page 4000 3000 2000 1000 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc Cies Coes Cres 0 1 10 100 VCE, Collector-to-Emitter Voltage (V) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage CPV364M4U 20 VCC = 400V I C = 10A 16 12 8 4 0 0 20 40 60 80 100 120 QG, Total Gate Charge (nC) Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.70 VCC = 480V VGE = 15V 0.65 TJ IC = 25 °C = 10A 0.60 0.55 0.50 0.45 0.40 0 10 20 30 40 RG , Gate Resistance (OhΩm) 50 Fig. 9 - Typical Switching Losses vs. Gate Resistance 10 RG = 10OhΩm VGE = 15V VCC = 480V 1 IC = 20A IC = 10A IC = 5.05A 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 Page

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