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Datasheet BFS20 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BFS20 | NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente
BFS20
NPN Silicon Plastic-Encapsulate Transistor
A suffix of "-C" specifies halogen & lead-free
FEATURES
High Fequency Application. VHF Band Amplifier application RoHS Compliant Product Power dissipation
PCM : 0.25 W
Collector Current ICM : 25mA
Collector-base voltage V( |  SeCoS | transistor |
| 2 | BFS20 | NPN Transistor RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN)
BFS20
FEATURES
* Power dissipation
PCM :
0.25
W (Tamb=25OC)
* Collector current
ICM :
0.025
A
* Collector-base voltage
V(BR)CBO : 30
V
* Operating and storage junction temperature range
TJ,Tstg: - |  RECTRON | transistor |
| 3 | BFS20 | NPN Silicon Epitaxial Planar Transistor BFS20
NPN Silicon Epitaxial Planar Transistor
High frequency transistor for IF and VHF applications
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Rang |  SEMTECH | transistor |
| 4 | BFS20 | NPN Medium Frequency Transistor SMD Type
Transistors
NPN Medium Frequency Transistor KFS20(BFS20)
Features
Low current (max. 25 mA) Low voltage (max. 20 V) Very low feedback capacitance (typ. 350 fF).
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm 0.1+0.05
-0.01
|  Kexin | transistor |
| 5 | BFS20 | NPN medium frequency transistor DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BFS20 NPN medium frequency transistor
Product specification Supersedes data of 1997 Jul 08 1999 Apr 15
Philips Semiconductors
Product specification
NPN medium frequency transistor
FEATURES • Low current (max. 25 mA) • Low voltage ( |  NXP Semiconductors | transistor |
BFS Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BFS17 | RF TRANSISTOR BFS17,S
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
RF TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage
Symbol vCEO vCBO
THERMAL CHARACTERISTICS
Characteristic
•Total Device Dissipation, T/\ = 25°C Derate above 25°C
Symbol PD
Storage Temperat  Motorola Semiconductors transistor | | |
| 2 | BFS17 | NPN small signal transistor Transistors
NPN small signal transistor
BFS17
BFS17
zFeatures 1) Ideal for RF applications. 2) Mixers and oscillations in TV tuners. 3) RF communications equipment.
zPackaging specifications
Type BFS17
Package Code Basic ordering unit (pieces)
Taping T116 3000
zDimensions (Unit : mm)
BFS17
1  ROHM Semiconductor transistor | | |
| 3 | BFS17 | Silicon NPN Planar RF Transistor Silicon NPN Planar RF Transistor
Applications
For broadband amplifiers up to 1 GHz.
Features
D High power gain D SMD-package
1
BFS17/BFS17R
1
23
94 9280
BFS17 Marking: E1 Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter
Absolute Maximum Ratings
Parameters
Collector-base voltage
Collecto  TEMIC transistor | | |
| 4 | BFS17 | NPN Transistors SMD Type
Transistors
NPN Transistors BFS17 (KFS17)
■ Features
● Collector Current Capability IC=25mA ● Collector Emitter Voltage VCEO=15V
+0.12.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
12
0.95 +0.1 -0.1 1.9 +0.1 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm 0.1 +0.05
-0.01
+0.10.97 -0.1
■ Kexin transistor | | |
| 5 | BFS17 | NPN 1 GHz wideband transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BFS17 NPN 1 GHz wideband transistor
Product specification File under Discrete Semiconductors, SC14 September 1995
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
DESCRIPTION NPN transistor in a plastic SOT23 package. APPLICATIONS � NXP Semiconductors transistor | | |
| 6 | BFS17 | Silicon NPN Planar RF Transistor BFS17/BFS17R/BFS17W
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
For broadband amplifiers up to 1 GHz.
Features
D High power gain D SMD-package
1 1
13 581 94 9280 9510527
13 581
2
3
3
2
BFS17 Marking: E1 P  Vishay Telefunken transistor | | |
| 7 | BFS17-HF | NPN Transistors SMD Type
Transistors
NPN Transistors BFS17-HF (KFS17-HF)
■ Features
● Collector Current Capability IC=25mA ● Collector Emitter Voltage VCEO=15V ● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
+0.12.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
12
0.9 Kexin transistor | |
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