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부품번호 | STP100N8F6 기능 |
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기능 | N-channel Power MOSFET | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 15 페이지수
STP100N8F6
N-channel 80 V, 0.008 Ω typ., 100 A, STripFET™ F6
Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code VDS
STP100N8F6 80 V
RDS(on)max.
0.009 Ω
ID
100 A
PTOT
176 W
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
Order code
STP100N8F6
Table 1: Device summary
Marking
100N8F6
Package
TO-220
Packing
Tube
February 2016
DocID026838 Rev 3
This is information on a product in full production.
1/15
www.st.com
Electrical characteristics
STP100N8F6
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4: On /off-states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
VGS = 0, ID = 250 µA
Zero-gate voltage
IDSS drain current
VGS = 0, VDS = 80 V
VGS = 0, VDS = 80 V,
TC = 125 °C
Gate-body leakage
IGSS current
VDS = 0, VGS = ± 20 V
VGS(th)
Gate threshold
voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source
on- resistance
VGS = 10 V, ID = 50 A
Min.
80
2
Typ. Max. Unit
V
1 µA
100 µA
100 nA
4
0.008 0.009
V
Ω
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 5: Dynamic
Test conditions
VGS = 0, VDS = 25 V,
f = 1 MHz
VDD = 40 V, ID = 100 A,
VGS = 10 V (see Figure
14: "Test circuit for gate
charge behavior" )
Min.
-
-
-
-
-
-
Typ.
5955
244
160
100
30
25
Max.
-
-
Unit
pF
pF
- pF
- nC
- nC
- nC
Symbol
td(on)
tr
td(off)
Parameter
Turn-on delay time
Rise time
Turn-off delay time
tf Fall time
Table 6: Switching times
Test conditions
VDD = 40 V, ID = 50 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 13: "Test
circuit for resistive load
switching times" and
Figure 18: "Switching time
waveform" )
Min.
-
-
-
-
Typ.
33
46
103
21
Max.
-
-
-
Unit
ns
ns
ns
- ns
4/15 DocID026838 Rev 3
4페이지 STP100N8F6
Figure 8: Static drain-source on-resistance
Electrical characteristics
Figure 9: Normalized on-resistance vs.
temperature
Figure 10: Gate charge vs. gate-source voltage
Figure 11: Capacitance variations
Figure 12: Source-drain diode forward characteristics
DocID026838 Rev 3
7/15
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
STP100N8F6 | N-channel Power MOSFET | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |