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부품번호 | STPSC10TH13TI 기능 |
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기능 | Dual 650V power Schottky silicon carbide diode | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 8 페이지수
STPSC10TH13TI
Dual 650 V power Schottky silicon carbide diode in series
,QVXODWHG72$%
Features
No or negligible reverse recovery
Switching behavior independent of
temperature
Suited for specific bridge-less topologies
High forward surge capability
Insulated package:
– Capacitance: 7 pF
– Insulated voltage: 2500 V rms
Datasheet - production data
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide band gap material
allows the design of a Schottky diode structure
with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
Especially suited for use in specific bridge-less
topologies, this dual 650 V rectifier will boost the
performance in hard switching conditions. Its high
forward surge capability ensures a good
robustness during transient phases.
.
Table 1. Device summary (per diode)
Symbol
Value
IF(AV)
VRRM
Tj (max.)
10 A
650 V
175 °C
January 2016
This is information on a product in full production.
DocID024699 Rev 3
1/8
www.st.com
8
Characteristics
STPSC10TH13TI
Figure 5. Junction capacitance versus reverse
voltage applied
(typical values, per diode)
Figure 6. Relative variation of thermal
impedance junction to case versus pulse
duration
&MS)
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926& P9506
7M &
=WKMF5WKMF
6LQJOHSXOVH
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(
(
W S V
( ( ( (
Figure 7. Non-repetitive peak surge forward
current versus pulse duration (sinusoidal
waveform, per diode)
Figure 8. Total capacitive charges versus
reverse voltage applied (typical values, per
diode)
( ,)60$
(
7D &
7D &
(
(
(
(
4&MQ&
WSV
(
959
4/8 DocID024699 Rev 3
4페이지 STPSC10TH13TI
3 Ordering information
Ordering information
Table 7. Ordering information
Order code
Marking
Package Weight Base qty Delivery mode
STPSC10TH13TI
STPSC 10TH13TI
Insulated
TO-220AB
2.3g
50
Tube
4 Revision history
Date
24-Jun-2013
07-Nov-2013
05-Jan-2016
Table 8. Document revision history
Revision
Changes
1 First issue.
2 Updated Figure 1 and Figure 2.
Updated Table 7.
3
Format updated to current standard.
DocID024699 Rev 3
7/8
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부품번호 | 상세설명 및 기능 | 제조사 |
STPSC10TH13TI | Dual 650V power Schottky silicon carbide diode | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |