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PDF STPSC8TH13TI Data sheet ( Hoja de datos )
| Número de pieza | STPSC8TH13TI | |
| Descripción | Dual 650V power Schottky silicon carbide diode | |
| Fabricantes | STMicroelectronics | |
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STPSC8TH13TI
Dual 650 V power Schottky silicon carbide diode in series
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Features
No or negligible reverse recovery
Switching behavior independent of
temperature
Suited for specific bridge-less topologies
High forward surge capability
Insulated package:
– Capacitance: 7 pF
– Insulated voltage: 2500 V rms
Datasheet - production data
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide band gap material
allows the design of a Schottky diode structure
with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
Especially suited for use in specific bridge-less
topologies, this dual 650 V rectifier will boost the
performance in hard switching conditions. Its high
forward surge capability ensures a good
robustness during transient phases.
.
Table 1. Device summary (per diode)
Symbol
Value
IF(AV)
VRRM
Tj (max.)
8A
650 V
175 °C
January 2016
This is information on a product in full production.
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STPSC8TH13TI
2 Package information
Package information
Epoxy meets UL94, V0
Lead-free package
Cooling method: by conduction (C)
Recommended torque value: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
2.1 Insulated TO-220AB package information
Figure 9. Insulated TO-220AB package outline
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5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STPSC8TH13TI.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STPSC8TH13TI | Dual 650V power Schottky silicon carbide diode | STMicroelectronics |
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