|
|
|
부품번호 | T835T-8T 기능 |
|
|
기능 | Triac | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 9 페이지수
A2
G
A1
A2
G
A2
A1
TO-220AB
(T835T-8T)
Table 1. Device summary
Symbol
Value
Unit
IT(rms)
VDRM, VRRM
VDSM, VRSM
IGT
8
800
900
35
A
V
V
mA
T835T-8T
8 A Snubberless™ Triac
Datasheet − production data
Features
• Medium current Triac
• High static and dynamic commutation
• Three quadrants
• ECOPACK®2 compliant component
Applications
• General purpose AC line load switching
• Motor control circuits
• Small home appliances
• Lighting
• Inrush current limiting circuits
• Overvoltage crowbar protection
Description
Available in through-hole package, the T835T-8T
Triac can be used for the on/off or phase angle
control function in general purpose AC switching
where high commutation capability is required.
This device can be used without a snubber circuit
when the limits defined in this datasheet are
respected
July 2014
This is information on a product in full production.
TM: Snubberless is a trademark of STMicroelectronics
DocID024555 Rev 3
1/9
www.st.com
9
Characteristics
T835T-8T
Figure 5. On-state characteristics (maximum
values)
100 ITM(A)
Tj max :
Vto = 0.85 V
Rd = 57 m.W
10
Tj = 150 °C
Tj = 25 °C
VTM(V)
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Figure 6. Surge peak on-state current versus
number of cycles
ITSM(A)
70
60
t = 20 ms
50
Non repetitive
One cycle
Tj initial=25 °C
40
30
20
10
0
1
Repetitive
TC= 131 °C
10
Number of cycles
100 1000
Figure 7. Non repetitive surge peak on-state
current and corresponding values of I2t
1000 ITSM(A), I²t (A²s)
dI/dt limitation: 100 A/µs
Tj initial=25 °C
ITSM
Figure 8. Relative variation of gate trigger
current and gate voltage versus junction
temperature (typical values)
2.0 IGT[Tj] / IGT[Tj = 25 °C], VGT[Tj] / VGT[Tj = 25 °C]
Typical values
1.5
IGT Q1-Q2
IGT Q3
100
VGT
1.0
I²t
Sinusoidal pulse with width tp<10 ms
10
0.01 0.10
1.00
0.5
tp(ms)
0.0
Tj(°C)
10.00
-50 -25
0
25 50 75 100 125 150
Figure 9. Relative variation of static dV/dt
immunity versus junction temperature (typical
values)
5 dV/dt [Tj] / dV/dt [Tj=150 °C]
(dV/dt) > 5KV/µs
4
VD=VR=402V
3
2
Figure 10. Relative variation of holding and
latching current versus junction temperature
(typical values)
2.0 IH, IL[Tj] / IH, IL[Tj = 25 °C]
1.5 IL
IH
1.0
0.5
1
Tj(°C)
Tj(°C)
0 0.0
25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
4/9 DocID024555 Rev 3
4페이지 T835T-8T
Ref.
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
Package information
Table 6. TO-220AB dimension values
Dimensions
Millimeters
Inches
Min.
Max.
Min.
Max.
4.40 4.60
0.61 0.88
1.14 1.70
0.48 0.70
15.25
15.75
1.27 typ.
10 10.40
2.40 2.70
4.95 5.15
1.23 1.32
6.20 6.60
2.40
2.72
13 14
3.50 3.93
16.40 typ.
28.90 typ.
3.75 3.85
2.65 2.95
0.17
0.024
0.045
0.019
0.60
0.39
0.094
0.19
0.048
0.24
0.094
0.51
0.137
0.147
0.104
0.05 typ.
0.64 typ.
1.13 typ.
0.18
0.035
0.067
0.027
0.62
0.41
0.106
0.20
0.052
0.26
0.107
0.55
0.154
0.151
0.116
DocID024555 Rev 3
7/9
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ T835T-8T.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
T835T-8T | Triac | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |