IR062HD4C10U-P2 - HIGH VOLTAGE HALF BRIDGE

International Rectifier에서 제조한 전자 부품 IR062HD4C10U-P2은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.

IR062HD4C10U-P2의 기능 및 특징 중 하나는 "HIGH VOLTAGE HALF BRIDGE" 입니다.

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IR062HD4C10U-P2 기능

HIGH VOLTAGE HALF BRIDGE

International Rectifier

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Preliminary Data Sheet No. PD60171-D IR062HD4C10U-P2 IR082HD4C10U-P2 HIGH VOLTAGE HALF BRIDGE Features • Output Power IGBT’s in half-bridge configuration • 575V rated breakdown voltage • High side gate drive designed for bootstrap operation Product Summary VIN (max) PD (TA = 25°C) VCE(ON) typ 575V 3.0W 3.0V • Matched propagation delay for both channels • Independent high and low side output channels (IR062HD4C10U-P2) or cross-conduction prevention logic (IR082HD4C10U-P2) • Undervoltage lockout • 3.3V, 5V and 15V input logic compatible • Metal heatsink back for improved PD Package Description The IR062HD4C10

Contents of page 4 out of 7 pages :

www.DataSheet4U.com IR062HD4C10U-P2 IR082HD4C10U-P2 Dynamic Electrical Characteristics VBIAS (VCC, VBS) = 15V and TA = 25°C unless otherwise specified. Switching time waveform definitions are shown in figure 2. Refer to IC data sheets (IR2106 and IR2108) for further characteristics. Symbol ton toff trr Qrr Definition Turn-on propagation delay (see note 2) Turn-off propagation delay (see note 2) Reverse recovery time (FRED Diode) Reverse recovery charge (FRED Diode) -IR062 -IR082 -IR062 -IR082 Min. — — — — — — Typ. Max. Units Test Conditions 220 310 Vo = 0V 680 900 257 380 Vo = 575V 220 400 28 — ns IF = 400mA 40 — nC di/dt = 100 A/us Note 2: Switching times as specified and illustrated in figure 2 are referenced to the VO output voltage. This is shown as VO in figure 2. Static Electrical Characteristics VBIAS (VCC, VBS) = 15V and TA = 25°C unless otherwise specified. The VIN and IIN parameters are referenced to COM. Symbol Definition TA = 25 oC Min. Typ. Max. Units Test Conditions VCCUV+ VBSUV+ VCCUV- VBSUV- VCC supply undervoltage positive going threshold VCC supply undervoltage negative going threshold 8.0 8.9 9.8 V V 7.4 8.2 9.0 V IQCC Quiescent VCC supply current 0.4 1.0 1.6 mA IQBO Quiescent VBO supply current 20 60 150 ILK Offset supply leakage current @25°C — — 100 VB = 575V IINLK Vin to VO leakage current @25°C @150°C — — — 250 1000 — µA VIN = 575V, VO = 0V IOLK VO leakage current @25°C @150°C — — — 250 1000 — VO = 575V VIH Logic “1” input voltage VIL Logic “0” input voltage 2.7 — — — — 0.8 V VCC = 10V to 20V IIN+ Logic “1” input bias current IIN- Logic “0” input bias

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부품번호	상세설명 및 기능	제조사
IR062HD4C10U-P2	HIGH VOLTAGE HALF BRIDGE	International Rectifier