TYN812 - SENSITIVE & STANDARD

STMicroelectronics에서 제조한 전자 부품 TYN812은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.

TYN812의 기능 및 특징 중 하나는 "SENSITIVE & STANDARD" 입니다.

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TYN812 기능

SENSITIVE & STANDARD

STMicroelectronics

TYN812 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.

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® TN12, TS12 and TYNx12 Series 12A SCRS A SENSITIVE & STANDARD Table 1: Main Features Symbol IT(RMS) VDRM/VRRM IGT Value 12 600 to 1000 0.2 to 15 Unit A V mA A G K A DESCRIPTION Available either in sensitive (TS12) or standard (TN12 / TYN) gate triggering levels, the 12A SCR series is suitable to fit all modes of control, found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits, capacitive discharge ignition and voltage regulation circuits... Available in through-hole or surface-mount packages, they provide an optimized performance

Contents of page 4 out of 11 pages :

www.DataSheet4U.com TN12, TS12 and TYNx12 Series Figure 3: Average and D.C. on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout) (DPAK) IT(AV)(A) 3.0 2.5 D.C. 2.0 D2PAK 1.5 α = 180° 1.0 DPAK 0.5 Tamb(°C) 0.0 0 25 50 75 100 125 Figure 4: Relative variation of thermal impedance junction to case versus pulse duration K=[Zth(j-c)/Rth(j-c)] 1.0 0.5 0.2 0.1 1E-3 tp(s) 1E-2 1E-1 1E+0 Figure 5: Relative variation of thermal impedance junction to ambient versus pulse duration (recommended pad layout, FR4 PC board for DPAK) Figure 6: Relative variation of gate trigger current and holding current versus junction temperature for TS8 series K=[Zth(j-a)/Rth(j-a)] 1.00 0.10 D2PAK DPAK TO-220AB / IPAK 0.01 1E-2 1E-1 tp(s) 1E+0 1E+1 1E+2 5E+2 IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C] 2.0 1.8 1.6 IGT 1.4 1.2 1.0 0.8 0.6 0.4 0.2 Tj(°C) 0.0 -40 -20 0 20 40 60 IH & IL RGK = 1kΩ 80 100 120 140 Figure 7: Relative variation of gate trigger current and holding current versus junction temperature for TN8 & TYN08 series IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C] 2.4 2.2 2.0 1.8 IGT 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 Tj(°C) 0.0 -40 -20 0 20 40 60 IH & IL 80 100 120 140 Figure 8: Relative variation of holding current versus gate-cathode resistance (typical values) for TS8 series IH[RGK] / IH[RGK=1kΩ] 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1E-2 RGK(kΩ) 1E-1 1E+0 Tj = 25°C 1E+1 4/11

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부품번호	상세설명 및 기능	제조사
TYN810	SCR	STMicroelectronics
TYN810RG	10A SCR	STMicroelectronics

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