NTD18N06L 데이터시트 PDF

ON Semiconductor에서 제조한 전자 부품 NTD18N06L은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.

NTD18N06L의 기능 및 특징 중 하나는 "Power MOSFET ( Transistor )" 입니다.

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NTD18N06L 기능
Power MOSFET ( Transistor )
ON Semiconductor
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NTD18N06L, NTDV18N06L Power MOSFET 18 A, 60 V, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • AEC Q101 Qualified − NTDV18N06L • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 10 MW) Gate−to−Source Voltage − Continuous − Non−repetitive (tpv10 ms) Drain Current − Cont

Contents of page 4 out of 7 pages :

NTD18N06L, NTDV18N06L POWER MOSFET SWITCHING Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculating rise and fall because drain−gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) can be made from a rudimentary analysis of the drive circuit so that t = Q/IG(AV) During the rise and fall time interval when switching a resistive load, VGS remains virtually constant at a level known as the plateau voltage, VSGP. Therefore, rise and fall times may be approximated by the following: tr = Q2 x RG/(VGG − VGSP) tf = Q2 x RG/VGSP where VGG = the gate drive voltage, which varies from zero to VGG RG = the gate drive resistance and Q2 and VGSP are read from the gate charge curve. During the turn−on and turn−off delay times, gate current is not constant. The simplest calculation uses appropriate values from the capacitance curves in a standard equation for voltage change in an RC network. The equations are: td(on) = RG Ciss In [VGG/(VGG − VGSP)] td(off) = RG Ciss In (VGG/VGSP) The capacitance

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NTD18N06L datasheet
NTD18N06L pinouts
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Power MOSFET ( Transistor )

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Power MOSFET ( Transistor )

ON Semiconductor
ON Semiconductor

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