WV3EG216M64STSU-D4 데이터시트 PDF



White Electronic Designs에서 제조한 전자 부품 WV3EG216M64STSU-D4은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.



WV3EG216M64STSU-D4의 기능 및 특징 중 하나는 "256MB - 2x16Mx64 DDR SDRAM UNBUFFERED" 입니다.


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WV3EG216M64STSU-D4 기능
256MB - 2x16Mx64 DDR SDRAM UNBUFFERED
White Electronic Designs
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WV3EG216M64STSU-D4 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.



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White Electronic Designs WV3EG216M64STSU-D4 PRELIMINARY* 256MB – 2x16Mx64 DDR SDRAM UNBUFFERED FEATURES Double-data-rate architecture PC2700@CL=2.5 Bi-directional data strobes (DQS) Differential clock inputs (CK & CK#) Programmable Read Latency 2,2,5 (clock) Programmable Burst Length (2,4,8) Programmable Burst type (sequential & interleave) Edge aligned data output, center aligned data input Auto and self refresh, (8K/64ms refresh) Serial presence detect with EEPROM Power Supply: VCC/VCCQ: 2.5V ± 0.20V Dual Rank Standard 200 pin SO-DIMM package • Package height options: D4: 31.75mm (1.25") NOTE: Consult factory for availability of: • RoHS comp

Contents of page 4 out of 11 pages :

White Electronic Designs WV3EG216M64STSU-D4 PRELIMINARY* ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to VSS Voltage on VCC and VCCQ supply relative to VSS Storage temperature Operating temperature Power Dissipation Short circuit output current Symbol VIN, VOUT VCC, VCCQ TSTG TA PD IOS NOTES: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. Value -0.5 ~ 3.6 -0.5 ~ 3.6 -55 ~ +150 0 ~ 70 8 50 Units V V °C °C W mA DC CHARACTERISTICS 0°C ≤ TA ≤ 70°C, VCC = 2.5V ± 0.2V Parameter Supply voltage DDR266/DDR333 (nominal VCC of 2.5V) I/O Supply voltage DDR266/DDR333 (nominal VCC of 2.5V) I/O Reference voltage I/O Termination voltage Input logic high voltage Input logic low voltage Input voltage level, CK and CK# Input differential voltage, CK and CK# Input crossing point voltage, CK and CK# Input leakage current Output leakage current wOwutwpu.Dt haigtahScuhrereentt4(Uno.rcmoaml strengh); VOUT = V +0.84V Output high current (normal strengh); VOUT = VTT -0.84V Output high current (half strengh); VOUT = VTT +0.45V Output high current (half strengh); VOUT = VTT -0.45V Addr, CAS#, RAS#, WE# CS#, CKE CK, CK# DM Symbol VCC VCCQ VREF VTT VIH(DC) VIL(DC) VIN(DC) VID(DC) VIX(DC) II IOZ IOH IOL IOH IOL Min 2.3 2.3 0.49*VCCQ VREF-0.04 VREF+0.15 -0.3 -0.3 0.3 0.3 -16 -8 -8 -4 -10 -16.8 16.8 -9 9 Max 2.7 2.7 0.51*VCCQ VREF+0.04 VCCQ+0.30 VREF-0.15 VCCQ+0.30 VCCQ+0.60 VCCQ+0.60 16 8 8 4 10 — — — — Unit V V V V V V V V uA uA uA uA uA mA mA mA mA Note 1 2 3 NOTES: 1. VREF is expected to be equal to 0.5*VCCQ of the transmitting device, and to track variations in the DC level of the same. Peak to peak noise on VREF may not exceed ±2% of the DC value 2. VTT is not applied directly to the device. VTT

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WV3EG216M64STSU-D4 datasheet
WV3EG216M64STSU-D4 pinouts
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WV3EG216M64STSU-D4

256MB - 2x16Mx64 DDR SDRAM UNBUFFERED

White Electronic Designs
White Electronic Designs

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