WV3EG232M64EFSU-D4 데이터시트 PDF

White Electronic Designs에서 제조한 전자 부품 WV3EG232M64EFSU-D4은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.

WV3EG232M64EFSU-D4의 기능 및 특징 중 하나는 "512MB - 2x32Mx64 DDR SDRAM" 입니다.

PDF 형식의 WV3EG232M64EFSU-D4 자료 제공

WV3EG232M64EFSU-D4 기능
512MB - 2x32Mx64 DDR SDRAM
White Electronic Designs
White Electronic Designs 로고 

WV3EG232M64EFSU-D4 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.

PDF 파일안의 텍스트 미리보기

White Electronic Designs WV3EG232M64EFSU-D4 ADVANCED* 512MB – 2x32Mx64 DDR SDRAM, UNBUFFERED, w/PLL, FBGA FEATURES Fast data transfer rate: PC-2100 and PC-2700 Clock speeds of 133 MHz and 166 MHz Two data transfers per clock cycle Supports ECC error detection and correction Bi-directional data strobes (DQS) Differential clock inputs (CK & CK#) Programmable Read Latency 2 and 2.5 (clock) Programmable Burst Length (2, 4 or 8) Programmable Burst type (sequential & interleave) Edge aligned data output, center aligned data input Auto and self refresh Serial presence detect (SPD) with EEPROM Dual Rank Power supply: VCC = VCCQ = +2.5V ±0.2V (133 and 166M

Contents of page 4 out of 11 pages :

White Electronic Designs WV3EG232M64EFSU-D4 ADVANCED ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to Vss Voltage on VCC supply relative to Vss Voltage on VCCQ supply relative to Vss Storage temperature Power dissipation Short circuit current Symbol VIN, VOUT VCC VCCQ TSTG PD IOS Value -0.5 ~ 3.6 -1.0 ~ 3.6 -0.5 ~ 3.6 -55 ~ +150 16 50 Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. Unit V V V °C W mA DC OPERATING CONDITIONS TA = 0°C to 70°C Parameter Supply voltage(for device with a nominal VCC of 2.5V) I/O Supply voltage I/O Reference voltage I/O Termination voltage(system) Input logic high voltage Input logic low voltage Input Voltage Level, CK and CK# inputs Input Differential Voltage, CK and CK# inputs Input crossing point voltage, CK and CK# inputs Input leakage current Output leakage current Output High Current(Normal strengh driver); VOUT = VTT + 0.84V Output High Current(Normal strengh driver); VOUT = VTT - 0.84V wOwutwpu.Dt HaitgahSChuerreetn4t(UHa.clfosmtrengh driver); VOUT = VTT + 0.45V Output High Current(Half strengh driver); VOUT = VTT - 0.45V Symbol VCC VCCQ VREF VTT VIH(DC) VIL(DC) VIN(DC) VID(DC) VIX(DC) II IOZ IOH IOL IOH IOL Min 2.3 2.3 VCCQ/2-50mV VREF-0.04 VREF+0.15 -0.3 -0.3 0.3 1.15 -2 -5 -16.8 16.8 -9 9 Max 2.7 2.7 VCCQ/2+50mV VREF+0.04 VCCQ+0.3 VREF-0.15 VCCQ+0.3 VCCQ+0.6 1.35 2 5 Unit v V V V V V V V V uA uA mA mA mA mA Note 1 2 4 4 3 5 Notes: 1. Includes ± 25mV margin for DC offset on VREF, and a combined total of ± 50mV margin for all AC noise and DC offset on VREF, bandwidth limited to 20MHz. The DRAM must accommodate DRAM current spikes on VREF and internal DRAM noise coupled TO VREF, both of

PDF 파일 전체 : 11 페이지중 1, 2페이지 미리보기
WV3EG232M64EFSU-D4 datasheet
WV3EG232M64EFSU-D4 pinouts
[ WV3EG232M64EFSU-D4.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는

부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.

관련 데이터시트

부품번호상세설명 및 기능제조사

512MB - 2x32Mx64 DDR SDRAM

White Electronic Designs
White Electronic Designs

우리는 플랫폼을 지속적으로 개선하고 새로운 기능을 추가하여 사용자 경험을 향상시키기 위해 최선을 다하고 있습니다.

DataSheet.kr    |   2020   |  연락처  

|  링크모음   |   검색  |   사이트맵