WV3EG265M64EFSU-D4 데이터시트 PDF



White Electronic Designs에서 제조한 전자 부품 WV3EG265M64EFSU-D4은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.



WV3EG265M64EFSU-D4의 기능 및 특징 중 하나는 "1GB- 2x64Mx64 DDR SDRAM UNBUFFERED" 입니다.


PDF 형식의 WV3EG265M64EFSU-D4 자료 제공

WV3EG265M64EFSU-D4 기능
1GB- 2x64Mx64 DDR SDRAM UNBUFFERED
White Electronic Designs
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WV3EG265M64EFSU-D4 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.



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White Electronic Designs WV3EG265M64EFSU-D4 1GB – 2x64Mx64 DDR SDRAM UNBUFFERED, w/PLL FEATURES Double-data-rate architecture PC2700 and PC2100 Bi-directional data strobes (DQS) Differential clock inputs (CK & CK#) Programmable Read Latency 2, 2.5 (clock) Programmable Burst Length (2,4,8) Programmable Burst type (sequential & interleave) Auto and self refresh, (8K/64ms refresh) Serial presence detect with EEPROM Power supply: VCC/VCCQ: 2.5V ± 0.2V Dual Rank 200 pin SO-DIMM package • Package height options: D4: 31.75 mm (1.25”) * This product is subject to change without notice. DESCRIPTION The WV3EG265M64EFSU is a 2x64Mx64 Double Data Rate SD

Contents of page 4 out of 10 pages :

White Electronic Designs WV3EG265M64EFSU-D4 ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to VSS Voltage on VCC supply relative to VSS Voltage on VCCQ supply relative to VSS Storage Temperature Operating Temperature Power Dissipation Short Circuit Current Symbol VIN, VOUT VCC VCCQ TSTG TA PD IOS Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. Value -0.5 to 3.3 -1.0 to 3.6 -1.0 to 3.6 -55 to +150 0 to +70 16 50 Units V V V °C °C W mA DC CHARACTERISTICS 0°C ≤ TA ≤ 70°C, VCC = 2.5V ± 0.2V Parameter Supply voltage DDR266/DDR333 (nominal VCC of 2.5V) I/O Supply voltage DDR266/DDR333 (nominal VCC of 2.5V) I/O Reference voltage I/O Termination voltage Input logic high voltage Input logic low voltage Input voltage level, CK and CK# Input differential voltage, CK and CK# Input crossing point voltage, CK and CK# Input leakage current wOwutwpu.Dt laeatakaSgheeceutr4reUnt.com Output high current (normal strengh); VOUT = V +0.84V Output high current (normal strengh); VOUT = VTT -0.84V Output high current (half strengh); VOUT = VTT +0.45V Output high current (half strengh); VOUT = VTT -0.45V Addr, CAS#, RAS#, WE# CS#, CKE CK, CK# DM Symbol VCC VCCQ VREF VTT VIH(DC) VIL(DC) VIN(DC) VID(DC) VIX(DC) II IOZ IOH IOL IOH IOL Min 2.3 2.3 0.49*VCCQ VREF-0.04 VREF+0.15 -0.3 -0.3 0.3 0.3 -32 -16 -10 -4 -10 -16.8 16.8 -9 9 Max 2.7 2.7 0.51*VCCQ VREF+0.04 VCCQ+0.30 VREF-0.15 VCCQ+0.30 VCCQ+0.60 VCCQ+0.60 32 16 -10 4 10 — — — — Unit V V V V V V V V uA uA uA uA uA mA mA mA mA Note 1 2 3 NOTES: 1. VREF is expected to be equal to 0.5*VCCQ of the transmitting device, and to track variations in the DC level of the same. Peak to peak noise on VREF may not exceed ±2% of the DC value 2. VTT is not applied

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WV3EG265M64EFSU-D4 datasheet
WV3EG265M64EFSU-D4 pinouts
[ WV3EG265M64EFSU-D4.PDF 데이터시트 ]

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부품번호상세설명 및 기능제조사
WV3EG265M64EFSU-D4

1GB- 2x64Mx64 DDR SDRAM UNBUFFERED

White Electronic Designs
White Electronic Designs

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