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Datasheet 12N60C3D Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 12N60C3D | HGTG12N60C3D HGTG12N60C3D
Data Sheet December 2001
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low |  Fairchild Semiconductor | data |
12N Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 12N035 | N-Channel Field Effect Transistor Bay Linear
Inspire the Linear Power
N-Channel Field Effect Transistor
12N035
Description
The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automotive and other b  BL transistor | | |
| 2 | 12N06Z | 12A 60V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 12N06Z
12A, 60V N-CHAN NEL POWER MOSFET
DESCRIPTION
1
Power MOSFET
The U TC 12N 06Z is an N-c hannel enh ancement mode Po wer MOSFET using UT C’ s adva nced te chnology to prov ide customers with a mi nimum on-state res istance, h igh s witching sp eed and low g  UNISONIC TECHNOLOGIES mosfet | | |
| 3 | 12N10 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 12N10
12A, 100V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 12N10 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance for extremely high dense cell design, rugged avalanche characteristics and le  Unisonic Technologies mosfet | | |
| 4 | 12N10P | N-CHANNEL MOSFET 12N10P
12 Amps,100 Volts N-CHANNEL Power MOSFET
FEATURE
12A,100V,RDS(ON)MAX=36mΩVGS=10V/10A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
APPLICATION
High Frequency Piont-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA
 CHONGQING PINGYANG mosfet | | |
| 5 | 12N18 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
12N18
·FEATURES ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 180V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.25Ω(Max) ·Fast Switching
·APPLICATIONS ·Switch mode power supply.
·  Inchange Semiconductor mosfet | | |
| 6 | 12N20 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
12N20
·FEATURES ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.25Ω(Max) ·Fast Switching
·APPLICATIONS ·Switch mode power supply.
· Inchange Semiconductor mosfet | | |
| 7 | 12N25 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 12N25
12A, 250V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 12N25 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance a Unisonic Technologies mosfet | |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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