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13N90 PDF Datasheet

The 13N90 is N-channel MOSFET Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 13N90
N-Channel Mosfet Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 13N90 ·FEATURES ·Drain Current ID= 13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch mode power supply ·DC-DC converters ·AC motor control ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

Inchange Semiconductor
Inchange Semiconductor
pdf

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Recommended search results related to 13N90

Part No Description ( Function) Manufacturers PDF
IXFH13N90   HiPerFET Power MOSFETs

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFM 10 N90 IXFH/IXFM 12 N90 IXFH13 N90 900 V 900 V 900 V ID25 10 A 12 A 13 A RDS(on) 1.1 W 0.9 W 0.8 W trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR Test Conditions TJ

ETC
ETC
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IXFH13N90   Power MOSFETs

w w w .d e e h s a t a . u t4 m o c

IXYS Corporation
IXYS Corporation
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IXFM13N90   HiPerFET Power MOSFETs

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFM 10 N90 IXFH/IXFM 12 N90 IXFH13 N90 900 V 900 V 900 V ID25 10 A 12 A 13 A RDS(on) 1.1 W 0.9 W 0.8 W trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR Test Conditions TJ

ETC
ETC
datasheet pdf
13N03LA   IPD13N03LA

IPD13N03LA IPU13N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target applications • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on

Infineon Technologies
Infineon Technologies
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13N06L   FQB13N06L

FQB13N06L / FQI13N06L May 2001 QFET FQB13N06L / FQI13N06L 60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has be

Fairchild Semiconductor
Fairchild Semiconductor
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

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