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Datasheet 1SS344 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 1SS344 | SCHOTTKY B ARRIER DIODE 1SS344
SCHOTTKY BARRIER DIODE
FEATURES Low Forward Voltage Fast Reverse Recovery Time High Forward Current APPLICATIONS High Speed Switching
SOT-23
MARKING: H9
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VR DC Blocking Voltage
IO Forward Continuous Cu |
 Jin Yu Semiconductor |
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| 3 | 1SS344 | SCHOTTKY BARRIER DIODE JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
1SS344
SCHOTTKY BARRIER DIODE
FEATURES Low Forward Voltage Fast Reverse Recovery Time High Forward Current APPLICATIONS High Speed Switching
MARKING: H9
SOT-23
Solid dot = Green molding compound |
 JCET |
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| 2 | 1SS344 | Surface Mount Schottky Planar Diode 1SS344
Surface Mount Schottky Planar Diode
SOT-23
Features
Fast reverse recovery time:trr=20ns(typ). Low forward voltage:VF=0.50V (typ). High average forward current:IO=0.5A(max.)
Applications
Ultra high speed switching application.
Ordering Information
Dimensions in inches and (millim |
 LGE |
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| 1 | 1SS344 | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) TOSHIBA Diode Silicon Epitaxial Schottky Planar Type
1SS344
Ultra High Speed Switching Application
1SS344
Unit: mm
z Low forward voltage
: VF (3) = 0.50V (typ.)
z Fast reverse recovery time : trr = 20ns (typ.)
z High average forward current : IO = 0.5A (max)
Absolute Maximum Ratings (Ta = 25° |
 Toshiba Semiconductor |
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