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Datasheet 1SS385F Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 1SS385F | DIODE (HIGH SPEED SWITCHING) TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS385F
High Speed Switching
1SS385F
Unit in mm
Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Ultra-small package
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) fo |
 Toshiba Semiconductor |
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| 1 | 1SS385FV | Silicon Epitaxial Schottky Barrier Type Diode TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS385FV
1SS385FV
High-Speed Switching Applications
z Low forward voltage: VF = 0.23 V (typ.) @IF = 5 mA z Ultra-small package
Absolute Maximum Ratings (Ta = 25°C)
0.22±0.05
Unit: mm
1.2±0.05 0.8±0.05
1 23
0.32±0.05
1.2±0.05 0.8±0.05 |
 Toshiba |
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