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Datasheet 1SS396 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | 1SS396 | Silicon Epitaxial Schottky Barrier Type Diode TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS396
Low Voltage High Speed Switching
1SS396
Unit: mm
Small package Low forward voltage Low reverse current
: SC-59 : VF (3) = 0.54V (typ.) : IR = 5μA (max.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating |
Toshiba Semiconductor |
1SS Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
1SS99 | Silicon Detector and Mixer Diode |
NEC |
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1SS97 | Mixer Diode |
NEC |
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1SS108 | Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching |
Hitachi Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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