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Datasheet 1SS401 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 1SS401 | Schottoky Diode 1.ANODE 2. NC 3. CATHODE
Features
Low forward voltage : VF=0.38V(typ.) Low reverse current : IR=50uA(max) Small total capacitance : CT =46pF(typ.)
MARKING:
1SS401
Schottoky Diode SOT-323
Dimensions in inches and (millimeters)
Maximum Ratings @TA=25℃
Parameter
Non-Repetitive Peak revers |
 LGE |
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| 3 | 1SS401 | Schottoky DIODES Schottoky DIODES
FEATURES Low forward voltage : VF=0.38V(typ.) Low reverse current : IR=50uA(max) Small total capacitance : CT =46pF(typ.)
1SS4 01
SOT-323
1.ANODE 2. NC 3. CATHODE
MARKING:
Maximum Ratings @TA=25℃
Parameter
Non-Repetitive Peak reverse voltage Peak Repetitive Peak reverse voltag |
 Jin Yu Semiconductor |
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| 2 | 1SS401 | SCHOTTKY BARRIER DIODE JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diodes
1SS401 Schottoky Barrier Diode
FEATURES Low forward voltage Lo w reverse current Small total capacitance
SOT-323
MARKING: D9
1 3
2
The marking bar indicates the cathode Solid dot = Green molding compound device |
 JCET |
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| 1 | 1SS401 | Silicon Epitaxial Schottky Barrier Type Diode TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS401
High Speed Switching Applications
1SS401
Unit: mm
z Low forward voltage z Low reverse current z Small total capacitance
: VF (3) = 0.38 V (typ.) : IR = 50μA (max) : CT = 46 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characterist |
 Toshiba Semiconductor |
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| Número de pieza | Descripción | Fabricantes | |
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