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Datasheet 1SS413 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 1SS413 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE 1SS413
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
for high speed switching application
PINNING
PIN 1 2
DESCRIPTION Cathode Anode
12
Q
Top View Marking Code: "Q" Simplified outline SOD-523 and symbol
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Peak Reverse Voltage Reverse Voltage Peak Forward |
 SEMTECH |
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| 2 | 1SS413 | Schottky Barrier Diode Schottky Barrier Diode Silicon Epitaxial
1SS413
1. Applications
• High-Speed Switching
2. Packaging and Internal Circuit
SOD-923
fSC
1SS413
1: Cathode 2: Anode
1: Cathode 2: Anode
Start of commercial production
2002-11
1 2014-07-09 Rev.3.0
1SS413
3. Absolute Maximum Ratings (Note) (Unless othe |
 Toshiba |
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| 1 | 1SS413CT | Schottky Barrier Diode Schottky Barrier Diode Silicon Epitaxial
1SS413CT
1. Applications
• High-Speed Switching
2. Features
(1) Low forward voltage : VF(3) = 0.50 V (typ.) (2) Low reverse current : IR = 0.5 µA (max) (3) Small total capacitance : Ct = 3.9 pF (typ.)
3. Packaging and Internal Circuit
1SS413CT
CST2
1: C |
Toshiba |
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