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Datasheet 1SS417 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 1SS417 | Silicon Epitaxial Planar Type Diode TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS417
1SS417
High Speed Switching Application
• Small package • Low forward voltage: VF (3) = 0.56V (typ.) • Low reverse current: IR = 5μA (Max.)
0.1
0.6±0.05
Unit: mm A
CATHODE MARK
1.0±0.05
0.8±0.05
Absolute Maximum Ratings |
 Toshiba |
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| 3 | 1SS417CT | Silicon Epitaxial Planar Type Diode TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS417CT
1SS417CT
High Speed Switching Application
Unit: mm
CATHODE MARK 1.0±0.05 0.25±0.03 0.25±0.03
0.65 0.05±0.03
• Small package
• Low forward voltage: VF (3) = 0.56 V (typ.) • Low reverse current: IR = 5 μA (max)
0.6±0.05
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Toshiba |
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| 2 | 1SS417FN2 | SURFACE MOUNT SCHOTTKY BARRIER P1SS417FN2
SURFACE MOUNT SCHOTTKY BARRIER
Voltage
40 V
Current 100 mA
Features
Small package Low forward voltage : VF(3)=0.51V(typ.) Low reverse current : IR=5A(Max.) Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std..
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 Pan Jit International |
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| 1 | 1SS417TM | HIGH SPEED SWITCHING DIODE 1SS417TM
HIGH SPEED SWITCHING APPLICATION
FEATURES
• Small package • Low forward voltage : VF(3)=0.56V(typ.) • Low reverse current : I R=5µA (Max.) • In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case : SOD-923, Plastic • Terminals : Solderable per MIL-STD-750, Meth |
Pan Jit International |
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