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Datasheet 1SS418 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | 1SS418 | Silicon Epitaxial Planar Type Diode TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS418
High Speed Switching Application
• Low forward voltage
: VF (3) = 0.23V (typ.)@ IF = 5mA
1SS418
Unit: mm
CATHODE MARK
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage Revers |
Toshiba |
1SS Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
1SS99 | Silicon Detector and Mixer Diode |
NEC |
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1SS97 | Mixer Diode |
NEC |
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1SS108 | Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching |
Hitachi Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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