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Datasheet 1SS420 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 1SS420 | Silicon Epitaxial Planar Type Diode TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS420
High-Speed Switching Applications
• Low reverse current: IR = 5 µA (max)
1SS420
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Maximum (peak) reverse voltage
VRM
35
Reverse voltage
VR 30
Maximum (peak) for |
 Toshiba |
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| 1 | 1SS420CT | Silicon Epitaxial Planar Type Diode TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS420CT
High-Speed Switching Applications
• Low reverse current: IR = 5 μA (max)
0.6±0.05
1SS420CT
Unit: mm
CATHODE MARK 1.0±0.05 0.25±0.03 0.25±0.03
0.65 0.05±0.03
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Maximum (pea |
Toshiba |
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