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20N60 데이터시트 PDF ( Data sheet )

번호 부품번호 상세설명 및 전자부품 기능 제조사 PDF
9 20N60   600V N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 20N60 20A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is

UTC
UTC
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8 20N60A4D   HGTG20N60A4D

HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high in

Fairchild Semiconductor
Fairchild Semiconductor
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7 20N60B   Hiperfast(tm) Igbt

HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE(sat)typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from ca

IXYS Corporation
IXYS Corporation
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6 20N60BD1   Hiperfast(tm) Igbt

HiPerFASTTM IGBT with Diode IXGH 20N60BD1 IXGT 20N60BD1 VCES IC25 VCE(sat)typ tfi(typ) = = = = 600 40 1.7 100 V A V ns Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25

IXYS Corporation
IXYS Corporation
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5 20N60C2   SPP20N60C2

Final data SPP20N60C2, SPB20N60C2 SPA20N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 • Ultra low gate charge • Periodic Product Summary VDS @ Tjmax 650

Infineon Technologies
Infineon Technologies
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