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Datasheet 22N055 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 22N055   N-CHANNEL POWER MOSFET

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP22N055HHE, NP22N055IHE, NP22N055SHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-st
 Renesas
Renesas		 datasheet 22N055 pdf

22N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
22N055

N-CHANNEL POWER MOSFET

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP22N055HHE, NP22N055IHE, NP22N055SHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated
 Renesas
Renesas		 datasheet pdf - Renesas
22NM60N

N-channel Power MOSFET

STB22NM60N, STF22NM60N, STI22NM60N STP22NM60N, STW22NM60N N-channel 600 V, 0.2 Ω, 16 A MDmesh™ II Power MOSFET in D2PAK, TO-220FP, I2PAK, TO-220 and TO-247 Features Order codes STB22NM60N STF22NM60N STI22NM60N STP22NM60N STW22NM60N VDSS (@Tjmax) 650 V 650 V 650 V 650 V 650
 STMicroelectronics
STMicroelectronics		 datasheet pdf - STMicroelectronics
22N50

N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 22N50 ·FEATURES ·Drain Current ID= 22A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch mod
 Inchange Semiconductor
Inchange Semiconductor		 datasheet pdf - Inchange Semiconductor


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
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