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Datasheet 2N4036 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2N4036 | PNP SILICON PLANAR TRANSISTOR Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR TRANSISTOR
2N4036 TO-39
General Purpose Transistor
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
VALUE
Collector -Emitter Voltage
VCEO
65
Collector -Base Voltage
VCBO
90
Emitter B |  CDIL | transistor |
| 2 | 2N4036 | CASE 79.04/ STYLE 1 TO-39 (TO-205AD) MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N4036/D
General Purpose Transistors
PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER
2N4036 2N4037
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Base Current Collector Current — Co |  Motorola Inc | data |
| 3 | 2N4036 | PNP switching transistor DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D111
2N4036 PNP switching transistor
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 19
Philips Semiconductors
Product specification
PNP switching transistor
FEATURES • High curren |  NXP Semiconductors | transistor |
| 4 | 2N4036 | MEDIUM-SPEED SWITCH 2N4036
MEDIUM-SPEED SWITCH
DESCRIPTION The 2N4036 is a silicon planar epitaxial PNP transistor in Jedec TO-39 metal case. It is intended particularly as medium speed saturated switch and general purpose amplifier.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEX V CER |  STMicroelectronics | data |
| 5 | 2N4036 | PNP SILICON PLANAR TRANSISTOR |  Boca Semiconductor Corporation | transistor |
2N4 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2N40 | N-CHANNEL POWER MOSFET 2N40
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
2A, 400V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, stable off–state characteristics and superior switching perfo  Unisonic Technologies mosfet | | |
| 2 | 2N4000 | NPN Transistor OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datashee  Texas transistor | | |
| 3 | 2N4000 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package 2N4000
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 80V
5.08 (0.200) typ.
I  Seme LAB data | | |
| 4 | 2N4000 | Trans GP BJT NPN 80V 1A 3-Pin TO-5 New Jersey Semiconductor data | | |
| 5 | 2N4001 | NPN Transistor OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datashee Texas transistor | | |
| 6 | 2N4001 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 2N4001
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 100V
5.08 (0.200) typ.
Seme LAB data | | |
| 7 | 2N4001 | Trans GP BJT NPN 100V 1A 3-Pin TO-5 New Jersey Semiconductor data | |
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