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Datasheet 2SC2712 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 16 | 2SC2712 | Silicon NPN transistor 2SC2712
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.
特征 / Features
电压，电流，放大高，噪声低，放大线性好。 High voltage, high current, high hFE, low noise, excellent h |
 BLUE ROCKET ELECTRONICS |
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| 15 | 2SC2712 | NPN Transistor Plastic-Encapsulate Transistors
FEATURES
Low Noise: NF=1 dB (Typ),10dB(MAX) Complementary to 2SA1162
2SC2712 (NPN)
MAXIMUM RATINGS (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature |
 HOTTECH |
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| 14 | 2SC2712 | Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2712
2SC2712
Audio Frequency General Purpose Amplifier Applications
Unit: mm
• High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)
= 0.95 (typ.) • High hFE |
 Toshiba Semiconductor |
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| 13 | 2SC2712 | AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2SC2712
AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR
FEATURES
* High Voltage and High Current : VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise
3
NPN SILICON TRANSISTOR
1 2
SOT-23
*Pb-free plating produc |
 Unisonic Technologies |
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