2SC3358 데이터시트 PDF ( Data sheet )

UTC 2SC3358 NPN SILICON EPITAXIALTRANSISTOR 3 HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 4 1 TO-50 1:COLLECTOR 2:EMITTER 3:BASE 4:EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAME

Transistor 2SC3354 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm 4.0±0.2 3.0±0.2 0.7±0.1 s Features q q q Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector po

DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good c

DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current char

DATA SHEET SILICON TRANSISTOR 2SC3357 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic. 4.5±0.