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Datasheet 2SD111 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 17 | 2SD111 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD111
DESCRIPTION ·High Power Dissipation-
: PC= 100W@TC= 25℃ ·High Current Capability-
: IC = 10A
APPLICATIONS ·Designed for power amplifier , power switching ,DC-DC
converter and regulator applications.
ABSO |
 INCHANGE |
 |
| 16 | 2SD1110 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1110
DESCRIPTION ·With TO-3PFa package ·Complement to type 2SB849 ·Wide area of safe operation APPLICATIONS ·For use in low frequency power amplifier applications PINNING
PIN 1 2 3 Base Collect |
 SavantIC |
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| 15 | 2SD1111 | NPN Epitaxial Planar Silicon Darlington Transistor Ordering number:EN751C
NPN Epitaxial Planar Silicon Darlington Transistor
2SD1111
Driver Applications
Applications
· Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.
Features
· High DC Current Gain (5000 or greater). · Large current capacity and wide ASO. · Low |
 Sanyo Semicon Device |
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| 14 | 2SD1113 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1113
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 300V(Min) ·High DC Current Gain
: hFE= 500(Min) @IC= 4A
APPLICATIONS ·Igniter
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAME |
 Inchange Semiconductor |
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