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Datasheet 2SD1640 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SD1640 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1640
DESCRIPTION ·Collector–Emitter Breakdown Voltage—
: V(BR)CEO = 100V(Min) ·DC Current Gain—
: hFE = 4000(Min) @ IC= 1 A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and relia |
 Inchange Semiconductor |
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| 1 | 2SD1640 | Silicon NPN epitaxial planar darlington type AF output amplifier Power Transistors
2SD1640
Silicon NPN epitaxial planar type darlington
Unit: mm
For low-frequency output amplification
φ 3.16±0.1
8.0+0.5 –0.1
3.2±0.2
3.8±0.3
1.9±0.1
• High forward current transfer ratio hFE • Large peak collector current ICP • High collector |
 Panasonic Semiconductor |
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