2SD1640 데이터시트 PDF ( Data sheet )

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1640 DESCRIPTION ·Collector Emitter Breakdown Voltage : V(BR)CEO = 100V(Min) ·DC Current Gain : hFE = 4000(Min) @ IC= 1 A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable op

Power Transistors 2SD1640 Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency output amplification φ 3.16±0.1 8.0+0.5 0.1 3.2±0.2 3.8±0.3 1.9±0.1 High forward current transfer ratio hFE Large peak collector current ICP High collector-emitter voltage (Base open) V

Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) ■ Features 0.7±0.2 Unit: mm 5.0±0.2 4.0±0.2 Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) 0.7±0.1 ■ Abs

Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB709A 2.8 0.3 +0.2 Unit: mm s Features q q q 0.65±0.15 +0.25 1.5 0.05 0.65±0.15 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type package

Transistor 2SD0601A (2SD601A) Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0709A (2SB709A) I Features G High foward current transfer ratio hFE. G Low collector to emitter saturation voltage VCE(sat). G Mini type package, allowing downsizing of the equipment and a