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Datasheet 2SD958 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SD958 | Silicon NPN epitaxial planer type(For high breakdown voltage and low-noise amplification) Transistor
2SD958
Silicon NPN epitaxial planer type
For high breakdown voltage and low-noise amplification Complementary to 2SB788
6.9±0.1
0.4
Unit: mm
2.5±0.1 1.0
1.0 2.4±0.2 2.0±0.2 3.5±0.1
s Features
q q q
1.5
1.5 R0.9 R0.9
0.85
Parameter Collector to base voltage Collector to emitter |
 Panasonic Semiconductor |
 |
| 2 | 2SD958 | Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification) Transistor
2SD958
Silicon NPN epitaxial planer type
For high breakdown voltage and low-noise amplification Complementary to 2SB788
6.9±0.1
0.4
Unit: mm
2.5±0.1 1.0
1.0 2.4±0.2 2.0±0.2 3.5±0.1
s Features
q q q
1.5
1.5 R0.9 R0.9
0.85
Parameter Collector to base voltage Collector to emitter |
Panasonic Semiconductor |
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| 1 | 2SD958 | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0958 (2SD958)
Silicon NPN epitaxial planar type
For low-frequency and low-noise amplification Complementary to 2SB0788 (2SB788)
(0.4)
(1.5) (1.5)
Unit: mm
6.9±0.1 2.5±0.1 (1.0)
3.5±0.1
1.0±0.1
Parameter Collector-base voltage (Emitter open) Collector-emit |
Panasonic Semiconductor |
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