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Datasheet 2SD965 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 14 | 2SD965 | Silicon NPN epitaxial planer type(For low-frequency power amplification) Transistor
2SD965
Silicon NPN epitaxial planer type
For low-frequency power amplification For stroboscope
5.1±0.2
Unit: mm
5.0±0.2 4.0±0.2
s Features
q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current |
 Panasonic Semiconductor |
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| 13 | 2SD965 | TRANSISTOR (NPN) 2SD965
TRANSISTOR (NPN)
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 Wing Shing Computer Components |
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| 12 | 2SD965 | LOW VOLTAGE HIGH CURRENT TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2SD965/A
LOW VOLTAGE HIGH CURRENT TRANSISTOR
FEATURES
* Collector current up to 5A * UTC 2SD965: Collector-Emitter voltage up to 20 V * UTC 2SD965A: Collector-Emitter voltage up to 30 V
NPN SILICON TRANSISTOR
1 SOT-89
1
TO-252
APPLICATIONS
* Audio amplifier * Flash |
 Unisonic Technologies |
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| 11 | 2SD965 | Silicon NPN epitaxial planar type SMD Type
Silicon NPN epitaxial planar type 2SD965
Transistors IC
Features
Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances at high efficiency with the lowvoltage power supply.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base volta |
 Guangdong Kexin Industrial |
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