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Datasheet 2SJ555 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SJ555 | P-Channel MOSFET ( Transistor ) 2SJ555
Silicon P Channel MOS FET
Description
High speed power switching
Features
• Low on-resistance RDS (on) = 0.017 Ω typ.
• Low drive current. • 4 V gate drive devices. • High speed switching.
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
1 2 3
G
D S
REJ03G0902-0 |
 Renesas |
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| 1 | 2SJ555 | Silicon P Channel MOS FET High Speed Power Switching 2SJ555
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-634A (Z) 2nd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.017 Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.
Outline
TO–3P
D
G
1
S
2
3
1. Gate 2. Drain (Flange) 3. Sou |
 Hitachi Semiconductor |
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