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Datasheet 2SJ587 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | 2SJ587 | Silicon P Channel MOS FET High Speed Switching 2SJ587
Silicon P Channel MOS FET High Speed Switching
ADE-208-801 (Z) 1st.Edition. June 1999 Features
• Low on-resistance R DS = 8.5 Ω typ. (VGS = -4 V , I D = -25 mA) R DS = 15 typ. (VGS = -2.5 V , ID = -10 mA) • 2.5 V gate drive device. • Small package (SMPAK)
Outline
SMPAK
3 1 2 D 3
2 |
Hitachi Semiconductor |
2SJ Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
2SJ72 | Silicon P-Channel Transistor |
Toshiba Semiconductor |
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2SJ115 | SILICON P-CHANNEL MOS FET |
Toshiba |
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2SJ6812 | NPN Triple Diffused Planar Silicon Transistor |
Fairchild Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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