|
|
Datasheet 2SJ605 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | 2SJ605 | MOS FIELD EFFECT TRANSISTOR DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ605
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER 2SJ605 2SJ605-S 2SJ605-ZJ 2SJ605-Z PACKAGE TO-220AB TO |
NEC |
|
1 | 2SJ605 | MOS Field Effect Transistor SMD Type
MOS Field Effect Transistors 2SJ605
TO-263
+ 0 .1 1 .2 7 -0 .1
Transistors IC
Unit: mm
+0.1 1.27-0.1 +0.2 4.57-0.2
Features
Super low on-state resistance: RDS(on)1 = 20 m RDS(on)2 = 31 m MAX. (VGS = -10 V, ID = -33 A)
+ 0 .2 8 .7 -0 .2
MAX. (VGS = -4.0 V, ID = -33 A)
Low input capacit |
Kexin |
Esta página es del resultado de búsqueda del 2SJ605. Si pulsa el resultado de búsqueda de 2SJ605 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |