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Datasheet 2SK117 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 11 | 2SK117 | N CHANNEL JUNCTIONS TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS) 2SK117
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK117
Low Noise Audio Amplifier Applications
• • • • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) High breakdown voltage: VGDS = −50 V Low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 |
 Toshiba Semiconductor |
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| 10 | 2SK117 | Silicon N Channel Junction Type Apm JFET
2SK117
Low Noise Amplifier Applications Silicon N Channel Junction Type
*High Yfs=15ms(typ)(VDS=10V,VGS=0) *High VGDS=--30V *Low noise:NF=1.0dB(typ)
(VDS=10V,ID=0.5mA,f=1kHz,RG=1k ) *High input impedance:IGSS=-1nA,VGS=-30V)
Absolute Maximum rating at Ta=25
SYMBOL
VGDS IG
Tstg Tj
PD
PAR |
 Apm |
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| 9 | 2SK1170 | Silicon N Channel MOS FET 2SK1169, 2SK1170
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004ZE-A (Package name |
 Renesas |
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| 8 | 2SK1170 | Silicon N-Channel MOS FET 2SK1169, 2SK1170
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
TO-3P
D G 1 2 3 1. Gate 2. Drain (Flange) 3 |
 Hitachi Semiconductor |
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