Datasheet 2SK2977LS Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2SK2977LS	DC/DC Converter Applications Ordering number:ENN6423 N-Channel Silicon MOSFET 2SK2977LS DC/DC Converter Applications Features · Low ON resistance. · 4V drive. Package Dimensions unit:mm 2078B [2SK2977LS] 10.0 3.5 4.5 2.8 3.2 7.2 16.0 16.1 0.9 1.2 14.0 3.6 0.7 0.75 1 2 3 Specifications Absolute Maximum Ratings at	Sanyo Semicon Device

2SK297 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2SK2973	RF POWER MOS FET(VHF/UHF power amplifiers) MITSUBISHI RF POWER MOS FET 2SK2973 DESCRIPTION 2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. OUTLINE DRAWING 4.6MAX 1.6±0.2 Dimensions in mm 1.5±0.1 FEATURES • High power gain:Gpe≥13dB @VDD=9.6V,f=450MHz,Pin=17d	Mitsubishi Electric Semiconductor
2SK2975	RF POWER MOS FET(VHF/UHF power amplifiers) MITSUBISHI RF POWER MOS FET 2SK2975 DESCRIPTION 2SK2975 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. OUTLINE DRAWING INDEX MARK (TOP) Dimensions in mm (BOTTOM) FEATURES • High power gain:Gpe≥8.4dB @VDD=9.6V,f=450MHz,Pin=	Mitsubishi Electric Semiconductor
2SK2974	RF POWER MOS FET(VHF/UHF power amplifiers) MITSUBISHI RF POWER MOS FET 2SK2974 DESCRIPTION 2SK2974 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. OUTLINE DRAWING INDEX MARK (TOP) Dimensions in mm (BOTTOM) FEATURES • High power gain:Gpe≥8.4dB @VDD=7.2V,f=450MHz,Pin=	Mitsubishi Electric Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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