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Datasheet 2SK383 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 9 | 2SK383 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK383
DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Fast Switching Speed
APPLICATIONS ·High speed power Switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
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 Inchange Semiconductor |
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| 8 | 2SK383 | Silicon N-Channel MOS FET |
 Hitachi |
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| 7 | 2SK3830 | N CHANNEL MOS SILICON TRANSISTOR 2SK3830
2SK3830
µ
µ µ
µ µ Ω Ω
2SK3830
VIN
VDD=30V
3.5
15.6 14.0 2.6
3.2
4.8
2.0
10V 0V VIN ID=36A RL=0.83Ω
1.2 15.0 20.0
D
PW=10µs D.C. 1%
VOUT
1.3
G
20.0 0.6
P.G 50Ω
1.6
2.0
2SK3830
1.0
S
1 0.6
2
3
1.4
1 : Gate 2 : Drain 3 : Source SANYO : TO-3PB
5.4 |
 Sanyo Semicon Device |
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| 6 | 2SK3831 | N-Channel Silicon MOSFET Ordering number : ENN8028
2SK3831
N-Channel Silicon MOSFET
2SK3831 General-Purpose Switching Device
Applications
Features
• Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Motor drive, DC / DC Converter. • Avalanche resistance guarantee.
Specifications
Absolute Maximum Rat |
Sanyo Semicon Device |
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