Datasheet 2STC4467 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2STC4467	High power NPN epitaxial planar bipolar transistor 2STC4467 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 120 V ■ Complementary to 2STA1694 ■ Fast-switching speed t(s)■ Typical ft = 20 MHz c■ Fully characterized at 125 oC roduApplications P■ Audio power amplifier leteDescription soThe dev	STMicroelectronics

2STC4 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2STC4468	High power NPN epitaxial planar bipolar transistor 2STC4468 High power NPN epitaxial planar bipolar transistor General features ■ ■ ■ ■ ■ Preliminary data High breakdown voltage VCEO=140V Complementary to 2STA1695 Fast-switching speed Typical ft =20MHz Fully characterized at 125 oC 3 2 1 Applica	STMicroelectronics
2STC4467	High power NPN epitaxial planar bipolar transistor 2STC4467 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 120 V ■ Complementary to 2STA1694 ■ Fast-switching speed t(s)■ Typical ft = 20 MHz c■ Fully characterized at 125 oC roduApplications P■ Audio power amplifier leteD	STMicroelectronics

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Número de pieza	Descripción	Fabricantes	PDF
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