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Datasheet 2STW4468 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2STW4468 | High Power NPN Epitaxial Planar Bipolar Transistor
2STW4468
High power NPN epitaxial planar bipolar transistor
General features
■ ■ ■ ■ ■ ■
High breakdown voltage VCEO=140V Complementary to 2STW1695 Fast-switching speed Typical ft =20MHz Fully characterized at 125 oC In compliance with the 2002/93/EC European Direc | ST Microelectronics | transistor |
2ST Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2ST1480 | (2ST1480 / 2ST2480) Complementary power transistors 2ST1480 2ST2480
Complementary power transistors
Preliminary data
Features
■ ■ ■ ■
Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Fully insulated package
2 1
Applications
■ ■ ■ ■
3
Voltage regulation Computer and peripheral equ ST Microelectronics transistor | | |
2 | 2ST2121 | High power PNP epitaxial planar bipolar transistor
2ST2121
High power PNP epitaxial planar bipolar transistor
Preliminary data
Features
■ ■ ■ ■ ■
High breakdown voltage VCEO = 250 V Complementary to 2ST5949 Fast switching speed Typical ft = 25 MHz Fully characterized at 125 oC
Applications
■
1 2
TO-3
Audio power STMicroelectronics transistor | | |
3 | 2ST2480 | (2ST1480 / 2ST2480) Complementary power transistors 2ST1480 2ST2480
Complementary power transistors
Preliminary data
Features
■ ■ ■ ■
Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Fully insulated package
2 1
Applications
■ ■ ■ ■
3
Voltage regulation Computer and peripheral equ ST Microelectronics transistor | | |
4 | 2ST5949 | High power NPN epitaxial planar bipolar transistor
2ST5949
High power NPN epitaxial planar bipolar transistor
Features
■ ■ ■ ■ ■
High breakdown voltage VCEO = 250 V Complementary to 2ST2121 Fast-switching speed Typical ft = 25 MHz Fully characterized at 125 oC
Applications
■
1 2
TO-3
Audio power amplifier
Descri STMicroelectronics transistor | | |
5 | 2STA1694 | High power PNP epitaxial planar bipolar transistor
2STA1694
High power PNP epitaxial planar bipolar transistor
Features
■ ■ ■ ■ ■
High breakdown voltage VCEO = -120 V Complementary to 2STC4467 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC
3 2 1
Applications
■
Audio power amplifier
TO-3P
STMicroelectronics transistor | | |
6 | 2STA1695 | High power PNP epitaxial planar bipolar transistor
2STA1695
High power PNP epitaxial planar bipolar transistor
General features
■ ■ ■ ■
Preliminary data
High breakdown voltage VCEO = -140V Complementary to 2STC4468 Typical ft =20MHz Fully characterized at 125 oC
3 2 1
Applications
■
Audio power amplifier TO-3P
De ST Microelectronics transistor | | |
7 | 2STA1943 | High power PNP epitaxial planar bipolar transistor
2STA1943
High power PNP epitaxial planar bipolar transistor
Features
■ ■ ■ ■
High breakdown voltage VCEO > -230V Complementary to 2STC5200 Fast-switching speed Typical fT = 30 MHz
3
Application
■
Audio power amplifier
1
2
TO-264
Description
This device is a NPN STMicroelectronics transistor | |
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Número de pieza | Descripción | Fabricantes | |
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