Datasheet 33N25 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	33N25	FDB33N25 FDB33N25 250V N-Channel MOSFET September 2005 UniFET FDB33N25 250V N-Channel MOSFET Features • 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V • Low gate charge ( typical 36.8 nC) • Low Crss ( typical 39 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TM Descriptio	Fairchild Semiconductor	data

33N Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	33N10	N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 33N10 ·FEATURES ·Drain Current ID= 33A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.06Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,conve	Inchange Semiconductor	mosfet
2	33N10	FQP33N10 FQP33N10 April 2000 QFET FQP33N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resis	Fairchild Semiconductor	data
3	33N25	FDB33N25 FDB33N25 250V N-Channel MOSFET September 2005 UniFET FDB33N25 250V N-Channel MOSFET Features • 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V • Low gate charge ( typical 36.8 nC) • Low Crss ( typical 39 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TM Descriptio	Fairchild Semiconductor	data

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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