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Datasheet 3DD5024 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 3DD5024 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·Wide Area of Safe Operation ·Built-in Damper Diode
APPLICATIONS ·Horizontal deflection output for TV, CRT monitor
applicaitions.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAME |
 Inchange Semiconductor |
 |
| 3 | 3DD5024 | CASE-RATED BIPOLAR TRANSISTOR 低频放大管壳额定的双极型晶体管 CASE-RATED BIPOLAR TRANSISTOR 3DD5308DHF FOR LOW FREQUENCY AMPLIFICATION
R
3DD5024(P)
主要参数
BVCBO IC VCE(sat) tf
MAIN CHARACTERISTICS
1500V 8.0 A 3.0V(max) 1.0 μs(max)
封装 Package TO-220HF
用途
彩色电视机行输出电 路
APPLIC |
 JILIN SINO-MICROELECTRONICS |
|
| 2 | 3DD5024A | CASE-RATED BIPOLAR TRANSISTOR R
µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð;§Ìå CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5024A FOR LOW FREQUENCY
3DD5024A
Ö÷Òª²ÎÊý BVCBO IC VCE(sat) tf ÓÃ;
z ²ÊÉ«µçÊÓ»úÐä³öµç·
MAIN CHARACTERISTICS
1500 V 8 3 0.6 A V(max) ¦Ì s(max)
·â×°
Package TO-220HF
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JILIN SINO-MICROELECTRONICS |
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| 1 | 3DD5024P | CASE-RATED BIPOLAR TRANSISTOR 低频放大管壳额定的双极型晶体管 CASE-RATED BIPOLAR TRANSISTOR 3DD5024P FOR LOW FREQUENCY AMPLIFICATION
R
3DD5024P
主要参数 MAIN CHARACTERISTICS
BVCBO IC VCE(sat) tf
1500V 8.0 A 3.0V(max) 1.0 μs(max)
封装 Package TO-220HF
用途
z 彩色电视机行输出电 路
APPLICATION |
 JILIN SINO |
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