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Datasheet 3DG101 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 3DG101 | Silicon NPN high frequency low power transistor 3DG101 型 NPN 硅高频小功率晶体管
参数符号
测试条件
PCM 极 限 ICM 值 Tjm
Tstg V(BR)CBO V(BR)CEO V(BR)EBO 直 ICBO 流 ICEO 参 IEBO 数 VBEsat VCEsat
hFE
交 流 fT
参 数
ICB=0.1mA ICE=0.1mA IEB=0.1mA VCB=10V VCE=10V VEB=1.5V IC=10mA
IB=1mA VCE=10V
IC=0.5mA VCE=10V
IC=3mA
f |
 ETC |
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| 1 | 3DG101 | NPN Silicon High Frequency Low Power Transistor 3DG101, 3DG110, 3DG111
NPN Silicon High Frequency Low Power Transistor
Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplificati |
 Qunli Electric |
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